发明名称 METHOD OF PLANARIZING A SEMICONDUCTOR SUBSTRATE
摘要 <p>The present invention provides a method of planarizing a substrate, the method including forming on the substrate a patterned layer having a first shape associated therewith; and processing the patterned layer with the first shape compensating for variations in the processing such that upon processing the patterned layer, the patterned layer comprises a substantially planar shape.</p>
申请公布号 WO2006020518(A1) 申请公布日期 2006.02.23
申请号 WO2005US27934 申请日期 2005.08.05
申请人 MOLECULAR IMPRINTS, INC. 发明人 SREENIVASAN, SIDLGATA V.
分类号 H01L21/311 主分类号 H01L21/311
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