| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride system semiconductor light-emitting element which has high transmittance and that solves the problem of contact resistance with respect to a p-type GaN layer, and to provide a manufacturing method for the semiconductor light-emitting element. <P>SOLUTION: According to the semiconductor light-emitting element and the manufacturing method, an ohmic formation layer made of MIO, ZIO, or CIO (In<SB>2</SB>O<SB>3</SB>containing any one of Mg, Zn, or Cu) is formed on an upper clad layer made of p-GaN. On the ohmic formation layer, a transparent electrode layer made of ITO or the like and a second electrode are further formed. This semiconductor light-emitting element solves the problem of the contact resistance between the upper clad layer and the second electrode, and yields high transmittance. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
