| 摘要 |
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged in a matrix form, a plurality of word lines connected to the memory cells, a row decoder including a plurality of decode sections and configured to receive first and second address signals for selecting the word lines, each of the decode sections which is provided for a respective one of the word lines, and includes first and second MOS transistors connected in series, the first MOS transistor having its gate electrode connected to receive the first address signal, the second MOS transistor having its gate electrode connected to receive the second address signal, the row decoder outputting a first signal for controlling the word lines, and a control circuit which delays the second address signal in time with respect to the first address signal.
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