Thin film transistor array panel and a manufacturing method thereof

摘要

A method of manufacturing a thin film transistor array panel and a thin film transistor array panel are provided. The method includes: forming a gate line and a storage electrode line on a substrate; forming a gate insulating layer on the gate line and the storage electrode line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion on the passivation layer; etching the passivation layer using the photoresist to expose a portion of the data line and a first portion of the gate insulating layer; removing the second portion of the photoresist; etching the passivation layer and the first portion of the gate insulating layer using the photoresist to expose a second portion of the gate insulating layer and a portion of the drain electrode and a portion of the gate line; depositing a conductive film on the first transformed photoresist; and removing the first transformed photoresist to form a pixel electrode connected to the exposed portion of the drain electrode.