| 摘要 |
PURPOSE: A configuration and a method for the low-loss writing of an MRAM are provided to produce a configuration for the low-loss writing of an MRAM that utilizes neither high cell resistances nor short word lines and/or bit lines. CONSTITUTION: A configuration and a method for the low-loss writing of an MRAM include setting voltages at bit lines and word lines(WL) such that a voltage across the memory cells(Z0,Z1...) between a selected word/bit line and the individual bit line/word lines is minimal. A voltage drop (V1-V2) occurs on a selected word/bit line connected to a particular memory cell when writing into the memory cell and voltages at the bit/word lines are set to minimize a cell voltage across the memory cells between a selected word/bit line and individual bit/word lines. A voltage drop (V1-V2) occurs on a selected word/bit line connected to a particular memory cell when writing into the particular cell, and, when a voltage(V1) and a voltage(V2).
|
