| 摘要 |
PURPOSE: A high density plasma etching equipment is provided to obtain an etching of hyperfine thin film patterns and a high etching selectivity which are enabled only in a high-priced high density plasma equipment by improving a low density plasma equipment. CONSTITUTION: The high density plasma etching equipment(800) comprises a central processing unit(100); a plasma etching chamber unit(500) comprising a plasma etching chamber(530), and upper and lower electrode plates(510,520) which are installed in the plasma etching chamber so that they are faced each other; a reactive gas supply unit(200) comprising a reactive gas supply unit(210) supplying a certain reactive gas into the plasma etching chamber, plural mass flow controllers(220) for controlling a mass flow of the reactive gas supplied from the reactive gas supply unit, and plural first control lines which are connected to the central processing unit so as to control the mass flow controllers; an RF power supply unit(300) comprising a first RF power supply unit(310) which is connected to any one of the first control lines so as to supply a first RF power to the upper electrode plate, and a second RF power supply unit(320) which supplies a second RF power to the lower electrode plate by the second control lines that are directly connected to the central processing unit; and an RF interface module(400) connected to the first control lines and the second control lines so as to control the first RF power and the second RF power.
|
