APPARATUS FOR MANUFACTURING SEMICONDUCTOR USING PLASMA

摘要

PURPOSE: An apparatus for manufacturing a semiconductor using plasma is provided to improve reliability by increasing uniformity of an etch rate in a radius direction regarding the entire surface of a wafer, and to increase work efficiency by arbitrarily controlling the etch rate in every positions of the wafer according to a process condition and a plasma type. CONSTITUTION: A plasma source supplies plasma to the wafer(44). The first lower electrode(40) is located in the lower center of the wafer, corresponding to the plasma source. The first bias power is applied to the first lower electrode. The second lower electrode(52) is so positioned in the lower portion of the wafer that the second lower electrode radially surrounds the first lower electrode, corresponding to the plasma source. The second bias power is applied to the second lower electrode.