| 摘要 |
<p>A wafer (W) having a resist film exposed with a certain pattern is developed using a certain developer liquid, and then a first rinsing liquid containing a certain surfactant is supplied to the wafer (W) for rinsing. Next, a chemical liquid containing a crosslinking agent for curing the resist pattern is supplied onto the wafer (W) and the surface of the wafer (W) is irradiated with a high energy beam, thereby curing the resist film by the synergistic effect between the crosslinking agent and the high energy beam. Following that, an inert liquid having a higher specific gravity than the chemical liquid is supplied to the wafer (W) and the resulting is left stand for a certain time so that the resist film is immersed in the inert liquid settling down. The wafer (W) is then subjected to spin drying.</p> |
