| 发明名称 |
ETCHING WITH ELECTROSTATICALLY ATTRACTED IONS |
| 摘要 |
<p>A technique comprises directing a plasma having at least first and second gasses at a substrate (202). The substrate (202) is at least partially covered with at least the first (206) and second layers (204). Ions of the first gas are electrostatically attracted towards the substrate (202). The second gas selectively etches the first layer (206) relative to the second layer (204).</p> |
| 申请公布号 |
WO2006019572(A1) |
申请公布日期 |
2006.02.23 |
| 申请号 |
WO2005US23925 |
申请日期 |
2005.07.06 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;VOSS, CURTIS |
发明人 |
VOSS, CURTIS |
| 分类号 |
(IPC1-7):B81C1/00 |
主分类号 |
(IPC1-7):B81C1/00 |
| 代理机构 |
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