| 摘要 |
In a semiconductor device, a method for reducing the effect of crosstalk from an aggressor line to a victim line begins with sensing the occurrence of a voltage change on the aggressor line that can induce a voltage pulse having a pulse magnitude that exceeds a pulse threshold on the victim line. The induced voltage pulse is counteracted by coupling the victim line to a counteracting voltage source. After a predetermined delay period, the coupling of the counteracting voltage source is removed from the victim line. The voltage change on the aggressor line my be sensed from a node connected to either the aggressor line or the victim line. A rising induced pulse is counteracted by coupling the victim line to a more negative voltage source, and a falling induced pulse is counteracted by coupling the victim line to a more positive voltage source.
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