| 摘要 |
Disclosed is a semiconductor device comprising a semiconductor substrate having isolation regions, and a MIS transistor comprising a gate electrode formed above the semiconductor substrate with a gate insulating film interposed therebetween, and a pair of contact layers formed on the semiconductor substrate sandwiching the gate electrode, the contact layers having an interfacial layer at an interface between the semiconductor substrate and the contact layers, the interfacial layer comprising a metal silicide containing at least one selected from a group consisting of Er, Gd, Tb, Dy, Ho, Tm, Yb, Lu, and Pt.
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