发明名称 Substrate for producing semiconductor packages
摘要 A parent or master substrate for a semiconductor package is provided, which can provide a plurality of unit substrates by cutting into pieces for producing a semiconductor device. The parent substrate includes an insulation layer, conductor patterns formed on first and second surfaces of the insulation layer, and PSR (photo solder resist) layers respectively formed on the first and second surfaces of the insulation layers and covering the conductor patterns. The parent substrate includes an upper part and a lower part divided by a reference surface which passes through the center of the insulation layer. When an equivalent thermal expansion coefficient alpha<SUB>upper </SUB>of the upper part is defined by the Equation of <maths id="MATH-US-00001" num="1"> <MATH OVERFLOW="SCROLL"> <MROW> <MROW> <MSUB> <MI>alpha</MI> <MI>upper</MI> </MSUB> <MO>=</MO> <MFRAC> <MROW> <MUNDEROVER> <MO>∑</MO> <MROW> <MI>i</MI> <MO>=</MO> <MN>1</MN> </MROW> <MI>n</MI> </MUNDEROVER> <MO>⁢</MO> <MROW> <MSUB> <MI>alpha</MI> <MI>i</MI> </MSUB> <MO>x</MO> <MSUB> <MI>E</MI> <MI>i</MI> </MSUB> <MO>x</MO> <MSUB> <MI>v</MI> <MI>i</MI> </MSUB> </MROW> </MROW> <MROW> <MUNDEROVER> <MO>∑</MO> <MROW> <MI>i</MI> <MO>=</MO> <MN>1</MN> </MROW> <MI>n</MI> </MUNDEROVER> <MO>⁢</MO> <MROW> <MSUB> <MI>E</MI> <MI>i</MI> </MSUB> <MO>x</MO> <MSUB> <MI>v</MI> <MI>i</MI> </MSUB> </MROW> </MROW> </MFRAC> </MROW> <MO>,</MO> </MROW> </MATH> </MATHS> where alpha<SUB>i </SUB>is respective thermal expansion coefficients of, E<SUB>i </SUB>is respective elastic moduli of, and v<SUB>i </SUB>is respective volume ratios of first through n<SUP>th </SUP>components constituting the upper part (e.g., insulation layer, conductor patterns, and PSR layers of the upper part), and an equivalent thermal expansion coefficient alpha<SUB>lower </SUB>of the lower part is defined by the Equation of <maths id="MATH-US-00002" num="2"> <MATH OVERFLOW="SCROLL"> <MROW> <MROW> <MSUB> <MI>alpha</MI> <MI>lower</MI> </MSUB> <MO>=</MO> <MFRAC> <MROW> <MUNDEROVER> <MO>∑</MO> <MROW> <MI>j</MI> <MO>=</MO> <MN>1</MN> </MROW> <MI>m</MI> </MUNDEROVER> <MO>⁢</MO> <MROW> <MSUB> <MI>alpha</MI> <MI>j</MI> </MSUB> <MO>x</MO> <MSUB> <MI>E</MI> <MI>j</MI> </MSUB> <MO>x</MO> <MSUB> <MI>v</MI> <MI>j</MI> </MSUB> </MROW> </MROW> <MROW> <MUNDEROVER> <MO>∑</MO> <MROW> <MI>j</MI> <MO>=</MO> <MN>1</MN> </MROW> <MI>m</MI> </MUNDEROVER> <MO>⁢</MO> <MROW> <MSUB> <MI>E</MI> <MI>j</MI> </MSUB> <MO>x</MO> <MSUB> <MI>v</MI> <MI>j</MI> </MSUB> </MROW> </MROW> </MFRAC> </MROW> <MO>,</MO> </MROW> </MATH> </MATHS> where alpha<SUB>j </SUB>is respective thermal expansion coefficients of, E<SUB>j </SUB>is respective elastic moduli of, and v<SUB>j </SUB>is respective volume ratios of first through m<SUP>th </SUP>components constituting the lower part (e.g., insulation layer, conductor patterns, and PSR layers of the lower part), a equivalent thermal expansion ratio (alpha<SUB>upper</SUB>/alpha<SUB>lower</SUB>) of alpha<SUB>upper </SUB>to alpha<SUB>lower </SUB>is selected to be within a range of 0.975 through 1.165.
申请公布号 US2006038280(A1) 申请公布日期 2006.02.23
申请号 US20050133727 申请日期 2005.05.20
申请人 SAMSUNG TECHWIN CO., LTD. REPUBLIC OF KOREA 发明人 JANG CHANG-SOO;RYU JAE-CHUL;WON DONG-KWAN
分类号 H01L23/12;H01L23/02;H01L23/48;H05K1/00 主分类号 H01L23/12
代理机构 代理人
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