| 摘要 |
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate (40,125). The method includes providing a substrate (40, 125) in a process chamber (10, 110), exciting a reactant gas in a remote plasma source (94, 205), thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate (40, 125) from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film. |
