Verdrahtungsverfahren für Halbleiter-Bauelemente zur Verhinderung von Produktpiraterie und Produktmanipulation und Verwendung des Halbleiter-Bauelements in einer Chipkarte

摘要

The present invention relates to a method for producing a metallised-circuit structure for preventing product piracy and manipulation as well as to a semi-conductor component produced according to this method and to the use of said semi-conductor component in a chip card. This method can be implemented using standardised semi-conductor techniques which are compatible with CMOS circuits, wherein the purpose of said method is to forestall the use of the so-called reverse engineering for acquiring foreign technological know-how or for reading and/or manipulating information stored in said component. According to the method of the present invention, it is further possible to produce a semi-conductor component which is protected against the influence of the environment. This method comprises processing the component layer in the substrate (1) and interrupting said processing immediately before obtaining a metallisation complex. The component substrate (1) thus obtained is assembled by applying its front side against the front side of a manipulation substrate (6), said component substrate (1) being then made thinner from the rear side. Contact holes (9) are then etched during a corresponding lithographic stage through the remaining thin layer of the component substrate, wherein said holes stop at the level of the areas to be brought into contact and are metallised so as to form electric contacts relative to the components.