| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor device which has a low-voltage driven TFT with a thin gate insulating film and has a high-voltage driven TFT with a thick gate insulating film and in which the gate electrode and the source/drain electrodes in the high-voltage driven TFT can be made of a low-resistance metal, such as Al alloy, and thermal activation can cause impurity activation, and to provide a method for manufacturing the transistor device. <P>SOLUTION: A first insulating film 117 is formed, a gate electrode 118 of the low-voltage driven TFT made of a Mo film and a mask film, covering the region to be formed as a channel of the high-voltage driven TFT made of the Mo film are formed on the first insulating film 117, impurities are injected into a semiconductor film 115, with the use of the gate electrode 118 and the mask film as a mask to form heavily-doped regions 122, 124. Thereafter, the resultant structure is heat treated under the conditions of, for example, a temperature of 500°C and two hours. Next a mask film is removed to form a second insulating film 126, and then a gate electrode 127 of the high-voltage driven TFT made of an Al alloy is formed on the second insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
