发明名称 SOLID STATE IMAGE SENSOR
摘要 <p><P>PROBLEM TO BE SOLVED: To obtain a solid state image sensor of multi-pixel sharing structure in which a sufficient area can be secured at a photoelectric converting section even if the various pixel area is micronized, and optical pixel centers can be arranged two-dimensionally while spaced apart evenly by arranging its photoelectric converting section at the optical center of each pixel. <P>SOLUTION: In a solid state image sensor comprising photoelectric converting sections 1 arranged in two-dimensional array, and voltage converting sections 2 for converting charges generated through photoelectric conversion at the photoelectric converting sections 1 into a voltage, one voltage converting section 2 is arranged between two photoelectric converting sections 1 contiguous to each other obliquely in the two-dimensional array and shared between two photoelectric converting sections 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006054276(A) 申请公布日期 2006.02.23
申请号 JP20040234061 申请日期 2004.08.11
申请人 SONY CORP 发明人 KUDO YOSHIHARU
分类号 H01L27/146;H01L27/14;H04N5/335;H04N5/369;H04N5/374;H04N5/378 主分类号 H01L27/146
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