| 摘要 |
PROBLEM TO BE SOLVED: To calculate capacity fluctuation by a metal dummy pattern inserted between wires by correcting permittivity of a dielectric body. SOLUTION: The semiconductor circuit parasitic capacitive element extracting device 1 is provided with a means 2 for correcting the permittivity of the dielectric body existing between circuit wires in response to insertion of the metal dummy pattern, and a means 3 for extracting a parasitic capacitive element between the circuit wires on the basis of the corrected permittivity and a circuit layout. The means 2 uses the dummy metal as the dielectric body having infinite permittivity, and corrects the permittivity by using area density to an area between the wires of the dummy metal. COPYRIGHT: (C)2006,JPO&NCIPI
|
