发明名称 Wide dynamic range sensor having a pinned diode with multiple pinned voltages
摘要 A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.
申请公布号 US2006038207(A1) 申请公布日期 2006.02.23
申请号 US20040921226 申请日期 2004.08.19
申请人 HONG SUNGKWON C;KRYMSKI ALEX 发明人 HONG SUNGKWON C.;KRYMSKI ALEX
分类号 H01L31/062 主分类号 H01L31/062
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