METHOD FOR PRODUCING AN INTEGRATED CIRCUIT AND SUBSTRATE COMPRISING A BURIED LAYER
摘要
The invention relates to a substrate comprising a buried layer. According to the invention, a silicon carrier wafer has a buried first silicon-germanium-carbon layer, on which a silicon layer is configured.
申请公布号
WO2006005321(A3)
申请公布日期
2006.02.23
申请号
WO2005DE01209
申请日期
2005.07.08
申请人
INFINEON TECHNOLOGIES AG;ILICALI, GUERKAN;LUYKEN, RICHARD JOHANNES;ROESNER, WOLFGANG
发明人
ILICALI, GUERKAN;LUYKEN, RICHARD JOHANNES;ROESNER, WOLFGANG