| 发明名称 |
MONOLITHIC POWER SEMICONDUCTOR STRUCTURES |
| 摘要 |
Provided herein are exemplary embodiments of monolithic semiconductor structures having at least two lateral constructed semiconductor devices (102, 104) combined on a single semiconductor substrate (106). |
| 申请公布号 |
WO2005059958(A3) |
申请公布日期 |
2006.02.23 |
| 申请号 |
WO2004US41243 |
申请日期 |
2004.12.10 |
| 申请人 |
GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
SHEN, ZHENG;OKADA, DAVID, N. |
| 分类号 |
H01L;H01L27/07;H01L27/088;H01L29/10;H01L29/78 |
主分类号 |
H01L |
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代理人 |
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