| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a laminated structure originally possessed by a non-volatile memory is utilized as the capacitor of a peripheral circuit and to provide its manufacturing method. SOLUTION: The semiconductor device is equipped with a laminated gate structure Gs which is composed of a first insulating film 13 formed on a semiconductor substrate 11, a first conductive film 14 which is formed on the first insulating film 13 to serve as a floating gate, a second insulating film 15 provided on the first conductive film 14, and a second conductive film 16 which is formed on the second insulating film 15 to serve as a control gate, a first contact plug 21 connected to the first conductive film 14, a second contact plug 20 connected to the second conductive film 16, and third contact plugs 27 and 28 connected to the semiconductor substrate 11. The first and second insulating film, 13 and 15, are used as the dielectric films of a capacitor. COPYRIGHT: (C)2006,JPO&NCIPI
|
