| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an analog semiconductor integrated circuit device, capable of performing complex signal processing through fine multi-Vth turning of a MOS transistor. SOLUTION: The method of manufacturing a MOS transistor comprises a step for forming a gate electrode, a step of forming an insulating film on the gate electrode and regions becoming source and drain later, a step of forming the source and drain, and a step of forming a nitride film selectively on the insulating film. The nitride film is formed through low-pressure CVD method and has a thickness of 50 nm or larger. COPYRIGHT: (C)2006,JPO&NCIPI
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