| 摘要 |
The semiconductor device according to the present invention comprises an output MOS transistor M 0 , an MOS transistor M 3 connected between a gate G 1 of the output MOS transistor M 0 and a ground voltage GND, a parasitic transistor Tr 1 which is formed in parallel with the MOS transistor M 3 with the substrate terminal of the MOS transistor M 3 as a base, and a parasitic transistor control circuit for controlling the conducting status of the parasitic transistor Tr 1 based on the power supply voltage Vcc.
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