PLANARIZING A SEMICONDUCTOR STRUCTURE TO FORM REPLACEMENT METAL GATES
摘要
A sacrificial gate structure, including nitride and fill layers, may be replaced with a metal gate electrode. The metal gate electrode may again be covered with a nitride layer covered by a fill layer. The replacement of the nitride and fill layers may reintroduce strain and provide an etch stop.
申请公布号
WO2006020158(A2)
申请公布日期
2006.02.23
申请号
WO2005US25339
申请日期
2005.07.14
申请人
INTEL CORPORATION;KAVALIEROS, JACK;BRASK, JUSTIN;DOCZY, MARK;SHAH, UDAY;BARNS, CHRIS;METZ, MATTHEW;DATTA, SUMAN;CHAU, ROBERT
发明人
KAVALIEROS, JACK;BRASK, JUSTIN;DOCZY, MARK;SHAH, UDAY;BARNS, CHRIS;METZ, MATTHEW;DATTA, SUMAN;CHAU, ROBERT