| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which can improve etching using a mask, and a method for manufacturing the semiconductor element. SOLUTION: A resist is coated on an SiO<SB>2</SB>film 63, and then a resist pattern 64 for a mask for diffraction-grating formation is formed (c). The SiO<SB>2</SB>film is processed by use of the resist pattern as a mask to thereby transfer the resist pattern to the SiO<SB>2</SB>film 63 (d). The resist pattern 64 is removed to thereby form an SiO<SB>2</SB>mask for manufacturing a waveguide layer structure having a tilted surface a on InP (e). By the diffusion of a chlorine plasma from the mask to the semiconductor surface, the etching depth becomes shallower as it goes more away from a mask end, thus forming a shape having the tilted surface a (f). Lastly, the SiO<SB>2</SB>film 63 is removed by RIE using a fluorine-carbide-based gas (g). COPYRIGHT: (C)2006,JPO&NCIPI |
