| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile memory cell which is capable of reducing the amount of charges trapped or leakage current induced in a tunnel insulating film. SOLUTION: A semiconductor device comprises the nonvolatile memory cell which has a silicon substrate 1, and an element isolation region which is prepared on the surface of the silicon substrate 1 and comprises an element isolation groove 2. The nonvolatile memory cell is prepared on the silicon substrate 1 and includes the tunnel insulating film 4, a floating gate electrode 5, a control gate electrode 7, and an inter-electrode insulating film 8. The method for manufacturing the semiconductor device has a process of sequentially forming an insulating film used as the tunnel insulating film 4, and a semiconductor film used as the floating gate electrode 5, on the silicon substrate 1; a process of forming the element isolation groove 2 by etching the semiconductor film, the insulating film and the silicon substrate 1; and a process of annealing the floating gate electrode 5, the tunnel insulating film 4, and the silicon substrate 1 in a steam atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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