| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element for decreasing the contamination of an insulating film between gates by decreasing dissipation power, and to provide a method of manufacturing the same. SOLUTION: A nonvolatile memory element comprises a semiconductor substrate, a tunnel oxide film formed on one region of the semiconductor substrate, the floating gate of a trench structure formed on the tunnel oxide film, a control gate formed in the internal space of the trench structure of the floating gate, and an insulating film between the gates formed between the floating gate and the control gate. COPYRIGHT: (C)2006,JPO&NCIPI
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