| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form a barrier metal film while reducing wiring resistance and improving yield. SOLUTION: The manufacturing method of semiconductor device comprises an insulating layer formation process for forming an insulating layer on the base body (S102-S108), an opening formation process for forming an opening in the insulating layer (S110), a first barrier metal film formation process for forming the first barrier metal film on the insulating layer top and in the opening by using PVD method (S116), a second barrier metal film formation process for forming the second barrier metallic film on it by using CVD method (S118), a third barrier metal film formation process for forming the third barrier metal film on it by using PVD method (S120), a deposition process for depositing a conductive material on it (S112, S124). The sum total film thickness of the first, the second, and the third barrier metal films to be formed are made smaller than 8 nm. COPYRIGHT: (C)2006,JPO&NCIPI
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