| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor of a complementary metal-oxide-semiconductor (CMOS), and a manufacturing method therefor. SOLUTION: The CMOS image sensor comprises a plurality of photosensitive elements formed on a semiconductor board, an inter-layer insulating layer formed on the photosensitive elements, a plurality of color filter layers each facing the inter-layer insulating layer to filter light for every wavelength band, a flattening layer formed on each color filter layer, and microlens layers each of which is formed on the flattening layer and has such a refractive index distribution as to converge light on the photosensitive element the microlens layer faces, according to an ion injection profile. COPYRIGHT: (C)2006,JPO&NCIPI
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