发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a protective circuit for compensating a decrease in the withstand voltage of an internal circuit, and deterioration in resistance and a decrease in resistance against static electricity discharge in the protective circuit accompanied by process miniaturization, and to provide a method therefor. SOLUTION: A mechanical switch 1 is provided in a semiconductor device, for example between an input terminal 3b and a grounding terminal 3c, to protect the entire semiconductor device. The mechanical switch physically has a movable part and a contact, and has basic characteristics as a switch such as on-resistance and a capacity between contacts when the switch is turned off that are much better than those of a switch made of a semiconductor element, thus achieving an appropriate protective circuit by using the mechanical switch as a switch for protecting against ESDs. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006054233(A) 申请公布日期 2006.02.23
申请号 JP20040233024 申请日期 2004.08.10
申请人 TOSHIBA CORP 发明人 GAMO TATSUHIRO;OGURO TATSUYA
分类号 H01L27/04;H01L21/822;H01L41/08;H01L41/09;H01L41/187 主分类号 H01L27/04
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