| 摘要 |
A thin film transistor ( 100 ) is mounted on a substrate ( 102 ), which is covered by a semiconductor layer ( 120 ). The semiconductor layer ( 120 ) has a first doped region ( 121 ) and a second doped region ( 122 ) with an undoped region ( 123 ) in between. In addition, the semiconductor layer ( 120 ) has a first further doped region ( 125 ) and a second further doped region ( 126 ) forming the source and drain of the thin film transistor ( 100 ) and being more heavily doped than the first doped region ( 121 ) and the second doped region ( 122 ). A part of the semiconductor layer ( 120 ) is covered by an oxide layer ( 140 ), which carries a conductive gate ( 104 ) over the undoped region ( 130 ) and a first spacer ( 111 ) and second spacer ( 112 ) over the first doped region ( 121 ) and the second doped region ( 122 ) respectively. In addition, the oxide layer ( 140 ) carries a first insulating spacer ( 125 ) and a second insulating spacer ( 126 ) to provide adequate insulation between the gate structure and a first conducting contact ( 135 ) and a second conducting contact ( 136 ) respectively. Because the first spacer ( 111 ), the second spacer ( 112 ), the first insulating spacer ( 115 ) and the second insulating spacer ( 116 ) are mounted on the oxide layer ( 140 ), a thin film transistor ( 100 ) with favourable parasitic conductivity characteristics is obtained. |
