Method of lithographic production of structures in a radiation sensitive layer especially for semiconductor devices such as DRAM chips uses radiation absorbing layer

摘要

A method of lithographic production of structures in a radiation-sensitive layer, especially for semiconductor elements, comprises forming a radiation-absorbing layer (1) on or in the substrate (10) and radiating at an angle to the normal so that at least part of the structure in the sensitive layer (20) is shadowed. An independent claim is also included for a structured semiconductor substrate for the above method.