| 摘要 |
<p>The invention provides a process for producing efficiently high-quality metal nitrides (such as gallium nitride) which little contain impurities, particularly, a process for the production of metal nitrides which is characterized by using a container made of a nonoxide material. The employment of a nonoxide material as the material of the container to come into contact with a starting metal or a product metal nitride makes it possible to inhibit the reaction of the container with the starting metal or the product metal nitride, the adhesion of the metal or the metal nitride to the container, and the contamination of the metal nitride with oxygen resulting from the material of the container, thus permitting the production of highly crystalline high-quality metal nitrides. Further, the feeding of a nitrogen source gas in an amount larger than a certain level at a flow velocity higher than a certain level makes it possible to convert a starting metal into a nitride at an extremely high degree of conversion, thus enabling the production of a metal nitride having a theoretical metal/nitrogen ratio in a high yield with little unreacted starting metal. The obtained metal nitrides are little contaminated with oxygen and have theoretical metal/nitrogen ratios, thus being useful as the raw material for bulk crystal growth.</p> |
