发明名称 Semiconductor device and manufacturing method thereof
摘要 According to the present invention, wirings, electrodes or the like formed from two films (an ITO film and an aluminum film) which are incompatible with each other are connected, and low power consumption is realized even if a display screen size is increased in an active matrix display device. A three-layer structure or a two-layer structure is employed to obtain a favorable ohmic contact with ITO. The structure of a wiring or an electrode includes a layer having an aluminum carbon alloy which does not react with ITO. The wiring or an electrode is contacted with ITO.
申请公布号 US2006038176(A1) 申请公布日期 2006.02.23
申请号 US20050202313 申请日期 2005.08.12
申请人 AKIMOTO KENGO;MURAKAMI SATOSHI 发明人 AKIMOTO KENGO;MURAKAMI SATOSHI
分类号 H01L31/036;H01L21/00 主分类号 H01L31/036
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