发明名称 Methods for minimizing defects when transferring a semiconductor useful layer
摘要 A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
申请公布号 US2006040470(A1) 申请公布日期 2006.02.23
申请号 US20040020057 申请日期 2004.12.21
申请人 发明人 BEN MOHAMED NADIA;MALEVILLE CHRISTOPHE;MAUNAND TUSSOT CORINNE
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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