METHOD OF OPERATING MAGNETIC RAM DEVICE USING SPIN INJECTION, AND MAGNETIC RAM DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for operating a magnetic RAM device including a memory cell having a magnetic tunnel junction structure on a substrate.

SOLUTION: The method is provided for operating the magnetic RAM device including the memory cell having the magnetic tunnel junction structures 41a, 41b on the substrate 1. The method includes steps of: impressing a writing current pulse through the magnetic tunnel junction structures 41a, 41b; and impressing a writing magnetic field pulse onto the magnetic tunnel junction structures, wherein at least a portion of the writing magnetic field pulse is overlapping in time with respect to at least a portion of the writing current pulse.

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