发明名称 MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION THEREOF
摘要 A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
申请公布号 US2006038246(A1) 申请公布日期 2006.02.23
申请号 US20050161675 申请日期 2005.08.11
申请人 ANELVA CORPORATION 发明人 MAEHARA HIROKI;OSADA TOMOAKI;DOI MIHOKO;TSUNEKAWA KOJI;WATANABE NAOKI
分类号 H01L29/82;H01L21/00;H01L43/00 主分类号 H01L29/82
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