Hard mask layer`s thickness determining method for manufacturing high integrated circuits, involves recording intensity of photoelectrons produced by x-ray energy, and finding layer thickness from intensity and/or energy of photoelectrons

摘要

The method involves irradiating a hard mask layer (2) arranged on a semiconductor substrate (1) with x-ray radiation by using an x-ray radiation source. Intensity of photoelectrons (4) produced by the x-ray energy is recorded based on its energy, and the thickness of the layer is determined from the intensity and/or the energy of the photoelectrons, where the thickness is determined for monitoring a removal process of the layer. An independent claim is also included for a device for determining a thickness of a layer arranged on a support e.g. substrate plate.