SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof, wherein damages to its planarizing aiding patterns caused by plasma charges can be suppressed. SOLUTION: The area of a virtual region 24 is made equal to the disposal area of a pad of the maximum metal pattern of the semiconductor device. The area of a disposal region 22 of planarizing aiding patterns is equal to the area of the plurality of abovementioned pads. Near the center of each virtual region 24, a discharge pattern 25 is so formed as to be surrounded by the planarizing aiding patterns 23. The discharge pattern 25 is connected via a contact 15d, with an n+-impurity diffusing layer formed in a semiconductor substrate of a p-type silicon substrate. That is, a p-n junction diode is so constituted of the n+-impurity diffusion layer so that the semiconductor substrate is able to discharge the electrons charged, in the discharging pattern 25 to the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI