发明名称 SCANNING ELECTRON MICROSCOPE
摘要 PROBLEM TO BE SOLVED: To reduce a beam drift deflecting an orbit of charged particles by a potential gradient generated by unevenness of the potential on the surface of a sample in a face of a charged particle beam irradiation area generated by electrification generated when an insulated sample is observed by the charged particle beams. SOLUTION: Energy of the charged particle beams to be irradiated on the sample is set so that a generation efficiency of the secondary electron generated from the sample becomes 1 or higher. As a constitution of the device, a flat electrode, on which a voltage can be impressed independently, having a hole through which primary charged particle beams can pass, is arranged so as to face the sample, a voltage can be independently impressed on the sample stand on which the sample is mounted, and a face facing the sample is flattened so as not to have indentation. Further, a diameter D of the hole formed on the flat electrode and a distance L between the flat electrode and the sample is set so as to fulfill a relation; D/L≥1.5. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006054094(A) 申请公布日期 2006.02.23
申请号 JP20040234324 申请日期 2004.08.11
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ARAI NORIAKI;ESUMI MAKOTO;OSE YOICHI
分类号 H01J37/20;H01J37/28 主分类号 H01J37/20
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