| 摘要 |
PROBLEM TO BE SOLVED: To provide an LVDS drive circuit for improving the maximum operation frequency of the LVDS drive circuit, thereby preventing voltage not lower than breakdown voltage from being applied to a low-voltage transistor by using a low-voltage transistor of which the voltage is lower than the power supply voltage for a switching transistor. SOLUTION: In the output drive circuit, a PMOS level shifter circuit 18 and an NMOS level shifter circuit 19 of which the breakdown voltage is reduced to voltage (e.g. 1.8V), as compared with the power supply voltage (e.g. 2.5V) of PMOS transistors 4, 6 and NMOS transistors 5, 7 in a switching circuit 14 and which can output logical L and H levels to be supplied to the gates G of the PMOS transistors 4, 6 and the NMOS transistors 5, 7 and an output switching circuit 20 for interrupting or connecting an output pass are added, and a current control circuit 8 is controlled in a common-mode circuit 15. COPYRIGHT: (C)2006,JPO&NCIPI
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