发明名称 |
Furnace purification and metal fluoride crystals grown in a purified furnace |
摘要 |
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
|
申请公布号 |
US2006037531(A1) |
申请公布日期 |
2006.02.23 |
申请号 |
US20040971315 |
申请日期 |
2004.10.22 |
申请人 |
FREDHOLM MICHELE M;KOHLI JEFFREY T;LEBLOND NICHOLAS;MAYOLET ALEXANDRE M;PSHENITSYNA VIKTORIA;SAXENA PAWAN;SCHERMERHORN PAUL M |
发明人 |
FREDHOLM MICHELE M.;KOHLI JEFFREY T.;LEBLOND NICHOLAS;MAYOLET ALEXANDRE M.;PSHENITSYNA VIKTORIA;SAXENA PAWAN;SCHERMERHORN PAUL M. |
分类号 |
C30B11/00;C30B9/00;C30B17/00;C30B21/02;C30B28/06 |
主分类号 |
C30B11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|