发明名称 |
COMPOSITION FOR FORMING TANTALUM OXIDE FILM, TANTALUM OXIDE FILM, AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a tantalum oxide film capable of easily and efficiently forming a high quality tantalum oxide film having a large specific dielectric constant and a less leak current and being preservable for a long time under an atmospheric condition at a high humidity, a tantalum oxide film formed thereby, and its manufacturing method. SOLUTION: The composition for forming the tantalum oxide film contains a reaction product prepared from tantalum alkoxide and at least one or more kinds among carboxylic acids and carboxylic acid anhydrides and a solvent. The tantalum oxide film is formed by forming a coating film of the composition and then treating it with heat and/or light. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004359532(A) |
申请公布日期 |
2004.12.24 |
申请号 |
JP20030182221 |
申请日期 |
2003.06.26 |
申请人 |
JSR CORP |
发明人 |
YONEKURA ISAMU;OKADA SACHIKO;KATO HITOSHI;SAKAI TATSUYA |
分类号 |
C01G35/00;C07F9/00;C23C18/12;C23C18/14;H01B3/46;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):C01G35/00;H01L21/824 |
主分类号 |
C01G35/00 |
代理机构 |
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