Method for fabricating the impurity region in semiconductor device,申请号KR20030094759-传众专利搜索

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发明名称	Method for fabricating the impurity region in semiconductor device
摘要
申请公布号	KR100552851(B1)	申请公布日期	2006.02.22
申请号	KR20030094759	申请日期	2003.12.22
申请人		发明人
分类号	H01L21/265	主分类号	H01L21/265
代理机构		代理人
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