发明名称 HIGH EFFICIENCY SOLID-STATE LIGHT SOURCE AND METHODS OF USE AND MANUFACTURE
摘要 A high-intensity light source (46) is formed by a micro array of semiconductor light source (52), such as LED's, laser diodes, or VCSEL placed densely on a substrate (50) to achieve power density output of at least 50 mW/cm2. The semiconductor devices are typically attached by a joining process to electrically conductive patterns on the substrate, and driven by a microprocessor controlled power supply. An optic element (58) may be placed over the micro array to achieve improved directionality, intensity, and/or spectral purity of the output beam. The light module may be used for such processes as, for example fluorescence, inspection, and measurement, photopolymerzation, ionization, sterilization, debris removal, and other photochemical processes.
申请公布号 KR20050044865(A) 申请公布日期 2005.05.13
申请号 KR20047017888 申请日期 2004.11.05
申请人 PHOSEON TECHNOLOGY, INC. 发明人 VLACH, FRANCOIS;MCNEIL, TOM;OWEN, MARK D.
分类号 A61L2/10;A61L2/26;A61L9/20;F21K99/00;F21V29/00;G01N21/88;G03F7/20;H01L21/00;H01L25/075;H01L31/12;H01L33/64;H01S5/022;H01S5/40 主分类号 A61L2/10
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