SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER PRODUCING METHOD

摘要

A silicon epitaxial wafer (W) characterized by comprising a silicon single crystal substrate (1) having COP (100) on a main surface (11), and a silicon epitaxial layer (2) vapor phase grown on the main surface (11) of the silicon single crystal substrate (1), wherein the main surface (11) is inclined by an angle Theta with respect to the [100]-axis in a direction from the (100)- plane to [011]- or [0-1-1] and also by an angle (Phi) in the direction of [01-1] or [0-11], and the angle Theta and/or the angle (Phi) is from 0° to 15'.