| 摘要 |
A resistive memory device (40) and method of manufacturing thereof including magnetic memory cells (14) having a second magnetic layer (20) including at least a first and second material (24/26). The Curie temperature of the second material (26) is lower than the Curie temperature of the first material (24). A plurality of non-continuous second conductive lines (22) are disposed over the magnetic memory cells (14). A current (28) may be run through the second conductive lines (22) to increase the temperature of the second material (26) to a temperature greater than the second material (26) Curie temperature, causing the second material (26) to lose its ferromagnetic properties, providing increased write selectivity to the memory array (40). |
