发明名称 |
Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography |
摘要 |
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase. |
申请公布号 |
EP1513012(A3) |
申请公布日期 |
2006.02.22 |
申请号 |
EP20040255386 |
申请日期 |
2004.09.03 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
SHI, XUELONG;CHEN, JANG FUNG;LAIDIG, THOMAS;WAMPLER, KURT E.;VAN DEN BROEKE, DOUGLAS |
分类号 |
G03F1/00;G03F1/36;G03F9/00;G06F17/50;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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