| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable high-withstand voltage semiconductor device in which the on-resistance of the device will not deteriorate, even if the device is used at a high temperature. SOLUTION: A high-withstand voltage semiconductor device is provided with a semiconductor layer 1, a drain offset diffused region 2, a source diffused region 5, a drain diffused region 4, a first conductivity-type embedded and diffused region 3 which is embedded in the region 2, at least one plate electrode (15a, 16a and 17a) formed in a floating state on a field insulating film 7 and metal electrodes (14-1, 14-2 and 14-3), which are formed on interlayer insulating film 8 located on the plate electrodes (15a, 16a and 17a), are electrically connected to each one part of them with the region 4 and are capacitance-coupled with the plate electrodes (15a, 16a and 17a). |
