Method of forming an isolation layer in a semiconductor device,申请号KR20040024186-传众专利搜索

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发明名称	Method of forming an isolation layer in a semiconductor device
摘要
申请公布号	KR100554828(B1)	申请公布日期	2006.02.22
申请号	KR20040024186	申请日期	2004.04.08
申请人		发明人
分类号	H01L21/3065;H01L21/762;H01L21/302;H01L21/3105;H01L21/311;H01L21/461;H01L21/76;H01L21/8242;H01L21/8247;H01L27/115	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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